"Requested_prod_id","Requested_GTIN(EAN/UPC)","Requested_Icecat_id","ErrorMessage","Supplier","Prod_id","Icecat_id","GTIN(EAN/UPC)","Category","CatId","ProductFamily","ProductSeries","Model","Updated","Quality","On_Market","Product_Views","HighPic","HighPic Resolution","LowPic","Pic500x500","ThumbPic","Folder_PDF","Folder_Manual_PDF","ProductTitle","ShortDesc","ShortSummaryDescription","LongSummaryDescription","LongDesc","ProductGallery","ProductGallery Resolution","ProductGallery ExpirationDate","360","EU Energy Label","EU Product Fiche","PDF","Video/mp4","Other Multimedia","ProductMultimediaObject ExpirationDate","ReasonsToBuy","Spec 1","Spec 2","Spec 3","Spec 4","Spec 5","Spec 6"
"","","9633","","Kingston Technology","KTM3320/512","9633","","Модули Памяти","911","System Specific Memory","","512 MB ( 2 x 256 MB ), DIMM 168-pin, SDRAM, 133 MHz / PC133, CL3, 3.3 V Kit for IBM ESERVER x Series 232","20240212101257","ICECAT","1","28070","https://images.icecat.biz/img/norm/high/9633-4289.jpg","177x150","https://images.icecat.biz/img/norm/low/9633-4289.jpg","https://images.icecat.biz/img/gallery_mediums/img_9633_medium_1480670619_5544_2323.jpg","https://images.icecat.biz/thumbs/9633.jpg","","","Kingston Technology System Specific Memory 512 MB ( 2 x 256 MB ), DIMM 168-pin, SDRAM, 133 MHz / PC133, CL3, 3.3 V Kit for IBM ESERVER x Series 232 модуль памяти 0,5 ГБ 133 МГц","","Kingston Technology System Specific Memory 512 MB ( 2 x 256 MB ), DIMM 168-pin, SDRAM, 133 MHz / PC133, CL3, 3.3 V Kit for IBM ESERVER x Series 232, 0,5 ГБ, 133 МГц, 168-pin DIMM","Kingston Technology System Specific Memory 512 MB ( 2 x 256 MB ), DIMM 168-pin, SDRAM, 133 MHz / PC133, CL3, 3.3 V Kit for IBM ESERVER x Series 232. Оперативная память: 0,5 ГБ, Тактовая частота памяти: 133 МГц, Форм-фактор памяти: 168-pin DIMM, Время задержки CAS: 3","","https://images.icecat.biz/img/norm/high/9633-4289.jpg","177x150","","","","","","","","","","Свойства","Оперативная память: 0,5 ГБ","Тактовая частота памяти: 133 МГц","Форм-фактор памяти: 168-pin DIMM","Время задержки CAS: 3","Напряжение памяти: 3.3 В"